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Structural Optical and Electrical Studies of AlGaN/GaN Hetrostructures with AlN Interlayer Grown on Sapphire Substrate by MOCVD

  • Raju Ramesh
  • Ponnusamy Arivazhagan
  • Mathiyan Jayasakthi
  • Ravi Loganthan
  • Kandhasamy Prabakaran
  • Boopathi Kuppuligam
  • Manavimaran Balaji
  • Krishnan Baskar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In the present study of AlGaN/GaN heterostructures with high quality AlN interlayer (AlN-IL) were grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrate. The AlN inter-layer thickness was varied as 1, 2 and 3 nm. The High-resolution X-ray diffraction (HRXRD) FWHM for (002) plane of GaN was measured for AlGaN/GaN with different AlN-IL thickness. The surface roughness was measured using Atomic Force Microscope (AFM). The Photoluminescence (PL) band edge emission, the room temperature and low temperature hall measurement show the enhancement of two-dimensional electron gas (2DEGs) sheet carrier density due to AlN-IL. The results have been discussed in detail.

Keywords

AFM MOCVD AlGaN/GaN Heterostructures AlN-IL 2DEGs 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Raju Ramesh
    • 1
  • Ponnusamy Arivazhagan
    • 1
  • Mathiyan Jayasakthi
    • 1
  • Ravi Loganthan
    • 1
  • Kandhasamy Prabakaran
    • 1
  • Boopathi Kuppuligam
    • 1
  • Manavimaran Balaji
    • 1
  • Krishnan Baskar
    • 1
  1. 1.Crystal Growth CentreAnna UniversityChennaiIndia

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