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Growth and Characterization of AlInGaN/AlN/GaN Grown by MOCVD

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

AlxInyGa1-x-yN epilayers have been grown by metal organic chemical vapor deposition (MOCVD) at different temperatures from 740 to 940 °C. The incorporation of indium increases with decreasing growth temperature, while the incorporation of Al composition was 30–40 %. The optical properties of the samples have been investigated by photoluminescence (PL). The results show that the sample grown at 890 °C exhibits the best crystalline and optical quality.

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Acknowledgements

The authors acknowledge Department of Science and Technology (DST). One of the authors (R. Loganathan) would like to thank Anna University, Chennai, for Anna Centenary Research Fellowship.

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Authors and Affiliations

  1. Crystal Growth Centre, Anna University, Chennai, 600025, India

    Ravi Loganathan, Mathaiyan Jayasakthi, Kandhasamy Prabakaran, Raju Ramesh, Ponnusamy Arivazhagan, Boopathi kuppulingam, Subramanian Sankaranarayanan, Manavaimaran Balaji, Shubra Singh & Krishnan Baskar

Authors
  1. Ravi Loganathan
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  2. Mathaiyan Jayasakthi
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  3. Kandhasamy Prabakaran
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  4. Raju Ramesh
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  5. Ponnusamy Arivazhagan
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  6. Boopathi kuppulingam
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  7. Subramanian Sankaranarayanan
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  8. Manavaimaran Balaji
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  9. Shubra Singh
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  10. Krishnan Baskar
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Corresponding author

Correspondence to Krishnan Baskar .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Loganathan, R. et al. (2014). Growth and Characterization of AlInGaN/AlN/GaN Grown by MOCVD. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_28

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