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Large-Signal Analysis of III-V Nitride Based DD-Transit Time Device: A New Source for THz Power Generation

  • Moumita Mukherjee
  • D. N. Bose
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Performance of GaN based Double Drift Avalanche Transit Time device is proposed in this paper, for the first time, for useful application in THz-imaging. The device is designed and analyzed by developing a generalized non-linear large-signal simulator that includes effects of elevated temperature, phonon-bottle-necking, scattering limited mobility-velocity and parasitic resistance. The study reveals that the proposed device is capable of generating a pulsed power ~ 0.4 W with an efficiency of 8 % at 1.4 THz under 50 % large signal modulation.

Keywords

GaN IMPATT Large-signal modeling THz-imaging Voltage modulation Admittance properties Power-frequency analysis Elevated temperature model Phonon-bottle-necking Photo-illumination 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Centre for Millimeter-wave Semiconductor Devices and Systems (CMSDS)DRDOKolkataIndia
  2. 2.St. Xavier’s CollegeKolkataIndia

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