Abstract
We present a simple non-destructive technique to characterize the AlGaN barrier layer thickness and sheet carrier concentration for AlGaN/GaN heterostructure. Characterization of AlGaN thickness and sheet carrier concentration has been carried out for AlGaN/GaN HEMT structure using the capacitance–voltage characterization of FATHEMT (dimension Lg = 20 µm, Wg = 150 µm). The estimated values for AlGaN thickness and the sheet carrier concentration (ns) were ~23.2 nm and ~1e13/cm2 respectively for MBE grown structure. The estimated values of AlGaN thickness are fairly matching well with measured data of HRXRD within variation of ±5 % and the estimated sheet carrier concentration values are also of the same order as evaluated using Hall Measurement.
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References
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Acknowledgments
The authors would like to thank all the members of HEMT fabrication/growth team, Solid State Physics Laboratory, Delhi for all the support and Dr. R. Muralidharan, Director, Solid State Physics Laboratory, Delhi-110054, India for constant guidance and encouragement.
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Arora, H., Rawal, D.S., Sehgal, B.K. (2014). Characterization of AlGaN Thickness and Sheet Carrier Concentration of AlGaN/GaN Based HEMT Using Electrical Measurement. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_22
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DOI: https://doi.org/10.1007/978-3-319-03002-9_22
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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