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Physics of Semiconductor Devices pp 881–883Cite as

Modeling Current Voltage Characteristics of MWIR HgCdTe Diodes at High Reverse Bias Voltage

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Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

In this paper we model the current voltage (I–V) characteristics of Hg1 − xCdxTe (x = 0.3) diodes at high reverse bias voltage. The breakdown characteristics are indicative of n+/n−/p kind of doping profile. Various current limiting mechanisms affecting the soft breakdown characteristics of Hg1 − xCdxTe diodes have been identified. We also found that the existing models do not accurately fit the I–V curves above a certain reverse bias voltage, which led us to investigate possible additional dark current mechanisms responsible for this kind of behavior. Thus, a new current limiting model is also proposed in this paper.

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References

  1. Schenk, M.Stahl, H-J-Wunsche, J. Crystal Growth, 101, 350, (1990).

    Google Scholar 

  2. V.Ananthram, K.N. Bhat, IEEE Trans on Electron Dev, Vol. 27, No.5, 939, (1980).

    Google Scholar 

  3. Angelo Scotty Gilmore, James Bang and Amanda Gerrish, J. Electron. Mat., Vol. 34, No.6, 913, (2005).

    Google Scholar 

  4. V Gopal, S K Singh and R M Mehra, Semicond. Sci. Technol.,16, 372, (2001).

    Article  Google Scholar 

  5. S.Velicu, R. Ashokan, S.Sivanathan, J. Electron. Mater., Vol.29, No.6, 823, (2000).

    Google Scholar 

  6. C. T. Elliott, N. T. Gordon, R. S. Hall, G. Crimes, J. Vac. Sci. Technol. A 8, 1251, (1990).

    Google Scholar 

  7. G.Perrais, O. Gravrand, J. Baylet, G. Destefanis, J. Rothman, J. Electron. Mater.,Vol.36, No.8, 963, 2007.

    Google Scholar 

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Author information

Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, Delhi, 110054, India

    Vanya Srivastav, Navneet Kaur Saini, L. Sareen, R. K. Bhan & R. K. Sharma

Authors
  1. Vanya Srivastav
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  2. Navneet Kaur Saini
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  3. L. Sareen
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  4. R. K. Bhan
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  5. R. K. Sharma
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Corresponding author

Correspondence to Vanya Srivastav .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Srivastav, V., Saini, N.K., Sareen, L., Bhan, R.K., Sharma, R.K. (2014). Modeling Current Voltage Characteristics of MWIR HgCdTe Diodes at High Reverse Bias Voltage. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_227

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