Characterization of AlGaN Thickness and Sheet Carrier Concentration of AlGaN/GaN Based HEMT Using Electrical Measurement

  • Henika AroraEmail author
  • D. S. Rawal
  • B. K. Sehgal
Part of the Environmental Science and Engineering book series (ESE)


We present a simple non-destructive technique to characterize the AlGaN barrier layer thickness and sheet carrier concentration for AlGaN/GaN heterostructure. Characterization of AlGaN thickness and sheet carrier concentration has been carried out for AlGaN/GaN HEMT structure using the capacitance–voltage characterization of FATHEMT (dimension Lg = 20 µm, Wg = 150 µm). The estimated values for AlGaN thickness and the sheet carrier concentration (ns) were ~23.2 nm and ~1e13/cm2 respectively for MBE grown structure. The estimated values of AlGaN thickness are fairly matching well with measured data of HRXRD within variation of ±5 % and the estimated sheet carrier concentration values are also of the same order as evaluated using Hall Measurement.


AlGaN/GaN HEMT Carrier concentration CV characterization 


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The authors would like to thank all the members of HEMT fabrication/growth team, Solid State Physics Laboratory, Delhi for all the support and Dr. R. Muralidharan, Director, Solid State Physics Laboratory, Delhi-110054, India for constant guidance and encouragement.


  1. 1.
    Kazutaka Takagi, Kazutoshi Masuda, Yasushi Kashiwabara, Hiroyuki Sakurai, Keiichi Matsushita, Shinji Takatsuka, Hisao Kawasaki,Yoshiharu Takada, and Kunio Tsuda, “X-band AlGaN/GaN HEMT with over 80 W output power,” IEEE Compound Semiconductor IC Symp.Dig., 2006, pp. 265-268.Google Scholar
  2. 2.
    Wu YF, Moore M, Saxler A, Wisleder T, Parikh P. 40-W/mm double field-plated GaN HEMTs. In: 64th Dev research conf; 2006. p. 151–2.Google Scholar
  3. 3.
    Mark Cornelia Johannes Carolus Maria Krämer “Gallium Nitride-based Microwave High-Power Heterostructure Field-Effect Transistors design, technology, and characterization” Eindhoven: Technische Universiteit Eindhoven, 2006 Gildeprint B.V., Enschede, The Netherlands.Google Scholar
  4. 4.
    Anders Lundskog “Characterization of advanced AlGaN HEMT Structures” Linkopings universitet, August 2007Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Solid State Physics LaboratoryTimarpurIndia

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