Abstract
We present here the Bi incorporation properties of GaSbBi layers grown by liquid phase epitaxy technique. Secondary ion mass spectroscopy technique indicates that Bi is distributed uniformly along the depth of the layer with slowly decreasing concentration away from the surface. Room temperature optical absorption measurements show a band gap lowering of 25 meV for a layer grown from a melt containing 1 at% Bi.
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Acknowledgements
We are thankful to the Department of Chemical Technology, University of Calcutta and to Dr. Mukul Gupta, UGC-DAE-CSR, Indore for the SEM and SIMS measurements, respectively. S.K. Das acknowledges research fellowship received from the Centre for Research in Nanoscience and Nanotechnology, University of Calcutta. The work was supported under the `University with Potential for Excellence` scheme of the University of Calcutta.
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Das, S.K., Das, T.D., Dhar, S. (2014). Bi incorporation in GaSbBi films grown by liquid phase epitaxy. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_218
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DOI: https://doi.org/10.1007/978-3-319-03002-9_218
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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