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Bi incorporation in GaSbBi films grown by liquid phase epitaxy

  • S. K. Das
  • T. D. Das
  • S. Dhar
Part of the Environmental Science and Engineering book series (ESE)

Abstract

We present here the Bi incorporation properties of GaSbBi layers grown by liquid phase epitaxy technique. Secondary ion mass spectroscopy technique indicates that Bi is distributed uniformly along the depth of the layer with slowly decreasing concentration away from the surface. Room temperature optical absorption measurements show a band gap lowering of 25 meV for a layer grown from a melt containing 1 at% Bi.

Index Terms

Dilute Bismide LPE Optical absorption 

Notes

Acknowledgements

We are thankful to the Department of Chemical Technology, University of Calcutta and to Dr. Mukul Gupta, UGC-DAE-CSR, Indore for the SEM and SIMS measurements, respectively. S.K. Das acknowledges research fellowship received from the Centre for Research in Nanoscience and Nanotechnology, University of Calcutta. The work was supported under the `University with Potential for Excellence` scheme of the University of Calcutta.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia

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