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Observation of Low Mobility Electron in Vacancy Doped LPE Grown HgCdTe

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Variable magnetic field Hall and resistivity data at different temperatures for vacancy doped LPE grown Hg0.71Cd0.29Te samples have been analyzed using multicarrier fitting. Samples grown from Te-rich melts by Horizontal Slider techniques have been investigated. Measurements were carried out at temperatures from 20 to 300 K using magnetic fields in 0–8 Tesla range. In addition to heavy hole and light hole an electron with low mobility (77 K value of ~812 cm2V−1s−1) was observed at temperatures below 150 K. Its presence has been attributed to interface as confirmed by Hall measurements of the interfacial layer (~4 µm above CdZnTe substrate) and is reported here for HgCdTe for the first time.

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Authors and Affiliations

  1. Netaji Subhas Institute of Technology, Dwarka, New Delhi, India

    Tapasya Jain & O. P. Thakur

  2. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi, India

    Tapasya Jain, Rachna Manchanda, B. L. Sharma & R. K. Sharma

Authors
  1. Tapasya Jain
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  2. Rachna Manchanda
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  3. B. L. Sharma
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  4. O. P. Thakur
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  5. R. K. Sharma
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Corresponding author

Correspondence to Tapasya Jain .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Jain, T., Manchanda, R., Sharma, B.L., Thakur, O.P., Sharma, R.K. (2014). Observation of Low Mobility Electron in Vacancy Doped LPE Grown HgCdTe. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_213

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