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Observation of Low Mobility Electron in Vacancy Doped LPE Grown HgCdTe

  • Tapasya Jain
  • Rachna Manchanda
  • B. L. Sharma
  • O. P. Thakur
  • R. K. Sharma
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Variable magnetic field Hall and resistivity data at different temperatures for vacancy doped LPE grown Hg0.71Cd0.29Te samples have been analyzed using multicarrier fitting. Samples grown from Te-rich melts by Horizontal Slider techniques have been investigated. Measurements were carried out at temperatures from 20 to 300 K using magnetic fields in 0–8 Tesla range. In addition to heavy hole and light hole an electron with low mobility (77 K value of ~812 cm2V−1s−1) was observed at temperatures below 150 K. Its presence has been attributed to interface as confirmed by Hall measurements of the interfacial layer (~4 µm above CdZnTe substrate) and is reported here for HgCdTe for the first time.

Keywords

HgCdTe Hall measurements Interface Low mobility electron 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Tapasya Jain
    • 1
    • 2
  • Rachna Manchanda
    • 2
  • B. L. Sharma
    • 2
  • O. P. Thakur
    • 1
  • R. K. Sharma
    • 2
  1. 1.Netaji Subhas Institute of TechnologyDwarkaIndia
  2. 2.Solid State Physics LaboratoryTimarpurIndia

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