Varying Photoconductivity of ZnO as a Function of Annealing Temperature
Arsenic has been doped in MOCVD grown ZnO thin films using thermal diffusion technique from semi-insulating GaAs substrate. Hall measurements showed p-type conductivity in ZnO. XPS analyses reveal that AsZn–VZn is the shallow acceptor complex which contributes p-type conductivity of the films. As the post-growth annealing temperature increased from 600 to 700 °C the hole concentration also increased from 1.1 × 1018 to 2.8 × 1019 cm−3 respectively. It shows an increase in UV-to-dark current ratio from 284 to 488 at 10 V respectively.
KeywordsMOCVD Annealing p-type
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