Fabrication of n-ZnO/p-GaAs Heterojunction and Prediction of Its Luminescence Based on Photoluminescence Study

  • Nripendra N. Halder
  • Sanjay Kumar Jana
  • Pranab Biswas
  • D. Biswas
  • P. Banerji
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Self-compensation arising out of non-stoichiometry makes ZnO as-grown n-type. Nonavailability of stable p-type doping with required carrier concentration limits the formation of homojunction of ZnO. Fabrication of semiconductor heterojunction is thus an alternative approach in device fabrication. In the present study n-ZnO has been grown on p-GaAs substrates using MOCVD technique. The colour of the light which is supposed to be emitted from the said heterojunction has been predicted to be purplish red from the room temperature photoluminescence study. The corresponding colour temperature is found to be less than 1,000 K. Efforts have been made to explain the prediction on the basis of band diagram.

Keywords

Semiconductor heterostructure Photoluminescence Spectral response Color temperature 

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Notes

Acknowledgments

NNH and SKJ thankfully acknowledge the financial help from the MEP Project (Department of Science and Technology, New Delhi, Sanction No. 100/IFD/196/2010-11, dated: 03/06/10). The authors are thankful to Mr. P. Chakraborty and Dr. S. Kundu for their technical help in the growth and analysis, respectively.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Nripendra N. Halder
    • 1
  • Sanjay Kumar Jana
    • 1
  • Pranab Biswas
    • 2
  • D. Biswas
    • 3
  • P. Banerji
    • 2
  1. 1.Advanced Technology Development CentreIndian Institute of TechnologyKharagpurIndia
  2. 2.Materials Science CentreIndian Institute of TechnologyKharagpurIndia
  3. 3.Department of Electronics and Electrical Communication EngineeringIndian Institute of TechnologyKharagpurIndia

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