Temperature Dependence Junction Parameters: Schottky Barrier, Flatband Barrier, and Temperature Coefficients of Schottky Diode

Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

The variation in electrical characteristics In-pSi Schottky diode have been systematically investigated as a function of temperature by using forward bias current–voltage measurement. The main diode parameters, ideality factor and zero bias barrier height (Фbo) were found strongly temperature dependent. The zero bias barrier increases and the ideality factor decreases with increasing temperature while the flat band barrier (Фbf) values increase with decreasing temperature. The temperature coefficient of the barrier height is found to be around −0.7 meV/o K, very closed agreement with platinum silicide contact on p-silicon and can be suitably understood on Tersoff’s model.

Keywords

Schottky barrier Flatband barrier height Temperature coefficient 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of PhysicsVeer Narmad South Gujarat UniversitySuratIndia

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