Temperature Dependence Junction Parameters: Schottky Barrier, Flatband Barrier, and Temperature Coefficients of Schottky Diode

  • J. M. Dhimmar
  • B. P. ModiEmail author
Conference paper
Part of the Environmental Science and Engineering book series (ESE)


The variation in electrical characteristics In-pSi Schottky diode have been systematically investigated as a function of temperature by using forward bias current–voltage measurement. The main diode parameters, ideality factor and zero bias barrier height (Фbo) were found strongly temperature dependent. The zero bias barrier increases and the ideality factor decreases with increasing temperature while the flat band barrier (Фbf) values increase with decreasing temperature. The temperature coefficient of the barrier height is found to be around −0.7 meV/o K, very closed agreement with platinum silicide contact on p-silicon and can be suitably understood on Tersoff’s model.


Schottky barrier Flatband barrier height Temperature coefficient 


  1. 1.
    Wen-Chang Hunag, Chia-Tsung Horng, Jin Chang Cheng, Chien-Chou Chen, Microelectronic Engineering, 88 (2011) 597CrossRefGoogle Scholar
  2. 2.
    S.Karats et al, Physica B 392 (2007) 43-50Google Scholar
  3. 3.
    H W Hubers and H P Roser, Journal of Applied Physics, 84, 9 (1998) 5326CrossRefGoogle Scholar
  4. 4.
    B P Modi, K D Patel, AIP conference Proceedings, 1249 (2011) 157Google Scholar
  5. 5.
    J Tersoff, Phys. Rev. Lett., 52 (1984) 465CrossRefGoogle Scholar
  6. 6.
    B P Modi, Evolution and Evaluation of Schottky Barriers, Ph. D. thesis, Sardar Patel University, V.V. Nagar, Gujarat (2002)Google Scholar
  7. 7.
    M.Wittmer, Phys. Rev., B 42 (1990) 5249Google Scholar
  8. 8.
    A Turat, M Saglam, H Eteoglu, N Yalcm, M Yildirim and B Abay, Physica B, 205 (1995) 41Google Scholar
  9. 9.
    J Tersoff, Phys. Rev., B 32, (1985) 6968.Google Scholar
  10. 10.
    M. Cardona and N. E. Christensen, Phys. Rev. B 35, (1987) 6182CrossRefGoogle Scholar
  11. 11.
    P. G. McCafferty, A Sellai, P. Dawson and H. Elabad, Solid State Electronics, 39 (1996) 583.CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of PhysicsVeer Narmad South Gujarat UniversitySuratIndia

Personalised recommendations