Influence of Lateral Current Spreading on the Characteristics of High Fill Factor Mesa-Stripe Laser Diode Arrays

  • Deepti Jain
  • Kamal Lohani
  • S. K. Mehta
  • Subodh Chandra
  • Pramod Kumar
  • Abhishek Sharma
  • Deepak Mohanty
  • Alok Jain
  • Satish Mohan
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

We have investigated the effect of mesa depth on the characteristics of high fill factor (typically the inter- element spacing is < ~20 μm and stripe width ~ 150 μm) laser diode arrays (LDAs). Measurements were carried out on different laser diode bars and it was observed that a shallow mesa not only increases the threshold current of these laser bars but it can prevent lasing condition for a combination of geometrical parameters of mesa. Minimum mesa depth required to achieve lasing in these laser diode arrays is calculated as a function of inter-element spacing considering the effect of lateral current spreading. The work reported here shows that in order to achieve lasing in laser diode arrays with small inter-element distance, the mesa should be deep enough to prevent electrical coupling between the neighboring stripes of LDAs.

Keywords

Laser diode arrays Fill factor Mesa Near field Slope efficiency Current spreading Threshold current 

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Notes

Acknowledgments

The authors thank Director SSPL Dr R Muralidharan for permission to publish this work. The authors are grateful to Mr A.Naik, Mrs TVSL Satyavani and Mr Amit Bhatti for support in technical work. The help provided by Mr Anil Kumar for lapping & polishing and Mr Ajeet Kumar for packaging is also acknowledged.

References

  1. 1.
    Streifer W, Scifres D R, Harangel, Welch, Berger J and Sakamato M 1988 Advances in Diode Laser Pumps IEEE J. Quantum Electron 24, 883-894CrossRefGoogle Scholar
  2. 2.
    Fan T Y and Byer R L 1988 Diode laser-pumped solid state lasers IEEE J. Quantum Electron 24, 895-912CrossRefGoogle Scholar
  3. 3.
    Botez D and Scifres D R, 1994 Diode Laser arrays (Cambridge University Press) pp 255-262Google Scholar
  4. 4.
    Harding C M and Waters R G, 1991 Novel densely Packed Laser Diode Array Electronics Letters27, 2233-2234Google Scholar
  5. 5.
    Tsukuda T, Nakashima H, Umeda J, Nakamura S, Chinone N, Ito and Nakada D 1972 Very‐Low‐Current Operation of Mesa‐Stripe‐Geometry Double‐Heterostructure Injection LasersAppl. Phys. Lett. 20, 344-345Google Scholar
  6. 6.
    Dutta N K, Wynn J D, Lopata J, Sivco D L and Cho A Y 1980 High power InGaAs/GaAs laser array Electronics Letters26, 1816Google Scholar
  7. 7.
    Harangel G L, Cross P S, Scifres D R, Welch D F, Lennon C R and Worland D P, 1986 High-power quasi-cw monolithic laser diode linear arrays Appl. Phys. Lett.49, 1418-1419Google Scholar
  8. 8.
    Casey H C, Panish M B 1978 Heterostructure Lasers Part B: Fabrication and Operating characteristics (New York :Academic Press) pp 158-161CrossRefGoogle Scholar
  9. 9.
    Mehta S K, Jain A, Mohan S, Satyavani T V S L, Jain D, Srinivasan T and Singh S N 2005 Development of high power SQW-SCH AlGaAs/GaAs laser diodes XIII International Workshop on Physics of Semiconductor Devices, New DelhiGoogle Scholar
  10. 10.
    Jain A, Satyavani T V S L, Sharma S, Jain D, Satish Mohan, A.A. Naik, Amit, Mehta S K, Vyas H P 2005 Optimization of facet coating for high power AlGaAs/GaAs laser diodes Proc. XIII International Workshop on Physics of Semiconductor Devices 137-140Google Scholar
  11. 11.
    Guoguang L, Yun H, Yunfei E 2010 Reliability of Indium Solder Die Bonding of High Power cm-Bars,Proc.11th International Conference on Electronic Packaging Technology & High Density Packaging 968-972Google Scholar
  12. 12.
    Du X, Guo W, Bifeng, Cui, Li W, Xu X 2010 Lateral Current Spreading in Stripe Laser Diodes Proc. Advances in Optoelectronics and Micro/Nano-Optics OSA-IEEE-COS 1-4Google Scholar
  13. 13.
    H.Yonezu, Isamu Sakuma,Kohroh Kobayashi, Taibun Kamejima, Masayasu Ueno and Yasuo Nannichi, 1973 A GaAs-AlGaAs double heterostructure planar stripe laser Jpn. J. Appl. Phys. 12,1585 -92Google Scholar
  14. 14.
    Ettenberg M, Lockwood H F, and Sommers H S, 1972 Radiation trapping in laser diodes J. Appl. Phys. 43, 5047-51CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Deepti Jain
    • 1
  • Kamal Lohani
    • 1
  • S. K. Mehta
    • 1
  • Subodh Chandra
    • 1
  • Pramod Kumar
    • 1
  • Abhishek Sharma
    • 1
  • Deepak Mohanty
    • 1
  • Alok Jain
    • 1
  • Satish Mohan
    • 1
  1. 1.Solid State Physics LaboratoryTimarpurIndia

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