An Accurate Measurement of Carrier Concentration in an Inhomogeneous GaN Epitaxial Layer from Hall Measurements
An appropriate method for an accurate determination of carrier concentration from Hall measurements for samples having large inhomogeneities is presented. Parasitic contributions in such samples generally limit the capabilities of Hall experiments where even the measurement of carrier type in some samples becomes doubtful. Here, we eliminate the major parasitic contributions from the measured Hall voltage through a systematic averaging procedure over the current and magnetic field polarities. Further, the carrier concentration values are unambiguously determined from the magnetic field dependent Hall measurements, where the slope of true Hall voltage versus magnetic field plot provides realistic values of carrier concentrations.
KeywordsHall voltage Carrier-concentration GaN InP
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Authors acknowledge Mr. S. Porwal, Mr. U. K. Ghosh and Mr. A. Khakha for the technical support during the measurements. Authors also acknowledge Dr. P. D. Gupta, Director RRCAT for his constant support during the course of this work.
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