Effect of Parasitic Capacitance on DG-HGTFET and Its Influence on Device RF Performance

  • Vikas Vijayvargiya
  • Santosh Kumar Vishvakarma
Conference paper
Part of the Environmental Science and Engineering book series (ESE)


In this paper, for the first time, the design of double-gate hetero-gate-dielectric tunnel field effect transistor (DG-HGTFET) for asymmetric drain doping for RF (Radio frequency) application is discussed. The impact of drain parasitic capacitance on the device performance is analyzed. The results indicate that parasitic capacitances are dominating factor which will degrade the RF characteristics. For this, the RF figures of merit for DG-HGTFET are analyzed in terms of unit-gain cut-off frequency (f T ), maximum frequency of oscillation (f max ). Further, asymmetric drain doping is also analyzed for suppressing the ambipolar behavior.


Cut-off frequency (fTRadio frequency (RF) Hetero-gate-dielectric tunnel field effect transistor (HG-TFET) 


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Vikas Vijayvargiya
    • 1
  • Santosh Kumar Vishvakarma
    • 1
  1. 1.Nanoscale Devices, VLSI/ULSI Circuit and System Design Lab, Electrical Engineering DisciplineIndian Institute of Technology IndoreIndoreIndia

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