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Physics of Semiconductor Devices pp 757–759Cite as

Effect of Parasitic Capacitance on DG-HGTFET and Its Influence on Device RF Performance

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Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

In this paper, for the first time, the design of double-gate hetero-gate-dielectric tunnel field effect transistor (DG-HGTFET) for asymmetric drain doping for RF (Radio frequency) application is discussed. The impact of drain parasitic capacitance on the device performance is analyzed. The results indicate that parasitic capacitances are dominating factor which will degrade the RF characteristics. For this, the RF figures of merit for DG-HGTFET are analyzed in terms of unit-gain cut-off frequency (f T ), maximum frequency of oscillation (f max ). Further, asymmetric drain doping is also analyzed for suppressing the ambipolar behavior.

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Author information

Authors and Affiliations

  1. Nanoscale Devices, VLSI/ULSI Circuit and System Design Lab, Electrical Engineering Discipline, Indian Institute of Technology Indore, Indore, India

    Vikas Vijayvargiya & Santosh Kumar Vishvakarma

Authors
  1. Vikas Vijayvargiya
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  2. Santosh Kumar Vishvakarma
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Corresponding author

Correspondence to Vikas Vijayvargiya .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Vijayvargiya, V., Vishvakarma, S.K. (2014). Effect of Parasitic Capacitance on DG-HGTFET and Its Influence on Device RF Performance. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_195

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