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Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Effect of both vertical and longitudinal electric field on AlGaN/GaN HEMT 2DEG channel is studied under long pulses with different duty cycles at two separate VGS (i.e. at +2 and -2 V). The duty cycles of applied pulses are of 100, 50, 5 and 0.5 %. Separate responses are being observed to confirm different non-ideal reliability issues like scatterings, effects of surface states and trapped electrons. It also raises an optimization scenario between available 2DEG concentration in channel and its various scattering and depletion phenomenon.

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Acknowledgments

This work has been supported by “ENS” project, Department of Electronics & Information Technology (DeitY), Government of India at Indian Institute of Technology, Kharagpur. The authors also would like to thank SVT Associates, USA and Prof. Edward Chang, NCTU, Taiwan.

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Authors and Affiliations

  1. Advance Technology Development Centre, Indian Institute of Technology, Kharagpur, India

    Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Palash Das, Rahul Kumar, Sanjay K. Jana, Sanjib Kabi & Dhrubes Biswas

  2. Department of Electrical Communication & Electronics Engineering, Indian Institute of Technology, Kharagpur, India

    Dhrubes Biswas

Authors
  1. Ankush Bag
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  2. Partha Mukhopadhyay
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  3. Saptarsi Ghosh
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  4. Palash Das
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  5. Rahul Kumar
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  6. Sanjay K. Jana
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  7. Sanjib Kabi
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  8. Dhrubes Biswas
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Corresponding author

Correspondence to Ankush Bag .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Bag, A. et al. (2014). Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_19

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