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Phonon-limited Diffusion Thermopower in Graphene

  • K. Rizwana Begum
  • N. S. Sankeshwar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Phonon-limited diffusion thermopower, S d , of graphene is studied, for 10 < T < 300 K taking into account the influence of substrate. The electrons are assumed to be scattered by the acoustic phonons (APs), optical phonons as well as the surface optical phonons (SOPs). The first order perturbation distribution function ϕ(E), as a function of carrier energy E, is computed by directly solving the linearized Boltzmann equation using the iteration technique. Numerical calculations of energy dependence of ϕ(E), bring out the characteristics of phonon scattering mechanisms. Determined mainly by APs at low temperatures and then by SOPs, S d for SiO2 substrate is found to increase with T reaching a room temperature value of ~30 μV/K.

Keywords

Single layer graphene Iteration Diffusion thermopower 

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Notes

Acknowledgments

This work is supported by UGC, India. RBK is grateful to UGC for the award of RFSMS.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of PhysicsKarnataka UniversityDharwadIndia

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