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Room Temperature Synthesis of Al:ZnO Quantum Dots

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Al Doped and undoped ZnO nanoparticles were synthesized at room temperature followed by quenching at relatively low temperature for size control. The XRD patterns of Al doped nanoparticles were similar to those of undoped nanoparticles, indicating the presence of Al ions at substitutional sites and that the AZO retained the crystal structure of ZnO. The presence of Al ions was confirmed by the XPS study. UV Visible spectroscopy reveals blue shift which in turn indicates an increase in the band gap.

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Correspondence to Krishna Richa .

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© 2014 Springer International Publishing Switzerland

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Laksh, M., Richa, K., Sinha, O.P. (2014). Room Temperature Synthesis of Al:ZnO Quantum Dots. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_178

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