Abstract
This paper reports the growth and characterization of nitrogen incorporated amorphous carbon films having embedded nanocrystallites deposited by filtered anodic jet carbon arc technique. The films are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman, residual stress and nanoindentation. The properties are found to depend on the substrate bias. The film deposited at −60 V substrate bias shows maximum hardness of 24 GPa and elastic modulus of 215 GPa.
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Acknowledgments
The authors are grateful to Prof. R. C. Budhani, Director, CSIR-National Physical Laboratory, New Delhi (India) for his kind permission to publish this work. We thank to Mr. K. N. Sood for providing SEM micrograph, to Dr. V. P. S. Awana for providing XRD patterns, to Mr. Sandeep for providing AFM micrograph and to Dr. Sushil Kumar for useful discussion. Mr. R. K. Tripathi is grateful to the Ministry of Science and Technology and Ministry of New and Renewable Energy, Government of India for providing financial assistant.
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Tripathi, R.K., Panwar, O.S., Ishpal, Chockalingam, S. (2014). Growth and Characterization of Nitrogen Incorporated Amorphous Carbon Films Having Embedded Nanocrystallies. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_176
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DOI: https://doi.org/10.1007/978-3-319-03002-9_176
Publisher Name: Springer, Cham
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