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Inductively Coupled Plasma Etching of GaAs with High Anisotropy for Photonics Applications

  • I. Seethalakshmi
  • Rashmi Joshi
  • Nandita Das Gupta
  • Bijoy Krishna Das
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) of Gallium Arsenide (GaAs) using BCl3/Cl2/Ar plasma was carried out for Photonic Crystal (PhC) applications. The recipe was optimized by varying various etch parameters. While the addition of N2 improved sidewall angle, the surface roughness increased for N2 flow rate beyond 1 sccm. An optimized BCl3/Cl2/Ar/N2 recipe with flow rate 6/1/11/1 sccm was used to etch holes in GaAs. For 4 μm diameter circular pattern, etch rate of about 556 nm/min with a sidewall angle of 86° and surface roughness of the order 1 nm were obtained.

Keywords

Gallium arsenide ICPRIE Photonic crystals Nanophotonics Anisotropic etching 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • I. Seethalakshmi
    • 1
  • Rashmi Joshi
    • 1
  • Nandita Das Gupta
    • 1
  • Bijoy Krishna Das
    • 1
  1. 1.Integrated Optoelectronics/Microelectronics and MEMS Labs, Department of Electrical EngineeringIITChennaiIndia

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