Novel Attributes in Scaling Issues of an InSb-Nanowire Field-Effect Transistor
Due to the inherently lower bandgap and larger permittivity of III–V materials, III–V MOSFETs are more susceptible to short-channel effects (SCE). They show promising improvement in drain-induced barrier lowering (DIBL), due to suppressed SCE. In this paper, we present a scaling study of nanowire field-effect transistors (NWFETs) using a two-dimensional model and explore the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, Switching speed, subthreshold swing and with different gate oxide thicknesses (tox) and nanowire diameters. Also, our results show the output conductance, transconductance, voltage gain and average electron velocity at the top of the barrier get improved in NWFETs with thinner tox and larger nanowire diameter.
KeywordsNanowire diameter NWFET tox Indium antimonide (InSb) and alumina (Al2O3)
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