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GaN HEMT Based S-Band Power Amplifier

  • Conference paper
Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

  • 326 Accesses

Abstract

In this paper, Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based S-band power amplifier design, simulation, fabrication, assembly and RF testing have been discussed. This power amplifier is capable of giving an output power ~8 watts in 3.3–3.5 GHz frequency range with a PAE greater than 90 %.

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REFERENCES

  1. Steve C. Cripps, “RF Power Amplifiers for Wireless Communications”, 2nd edition, Norwood, MA: Artech House, 2006.

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  5. Micheal Boers, Anthony Parker and Neil Weste, “A GaN HEMT Amplifier with 6-W Output Power and > 85% Power Added Efficiency”, IEEE Microwave Magazine, April 2008

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Author information

Authors and Affiliations

  1. Solid State Physics Laboratory, DRDO, Ministry of Defence, Delhi, India

    Archana Ahirwar, Poonam Singh, S. K. Tomar, Meena Mishra, Ashok Kumar & B. K. Sehgal

Authors
  1. Archana Ahirwar
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  2. Poonam Singh
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  3. S. K. Tomar
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  4. Meena Mishra
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  5. Ashok Kumar
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  6. B. K. Sehgal
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Corresponding author

Correspondence to Archana Ahirwar .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Cite this paper

Ahirwar, A., Singh, P., Tomar, S.K., Mishra, M., Kumar, A., Sehgal, B.K. (2014). GaN HEMT Based S-Band Power Amplifier. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_17

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