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Investigations on: How the Band Lineups, Band Offsets and Photoluminescences of an InxGa1−xN/GaN Quantum Well change with Biaxial Strain

  • Partha Pratim Bera
  • Siddhartha Panda
  • Dipankar Biswas
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Due to the large controversy regarding the material parameters of InGaN material systems, the band line up of InxGa1−xN/GaN heterostructures still remains controversial. In this paper we calculate the band positions for strained and unstrained InxGa1-xN/GaN interfaces considering the band gap of InN 0.7 eV, recently settled after long debate. Large changes of conduction band offsets and valance band offsets are pointed out when the previously reported band gap of InN, 1.9 eV is substituted by 0.7 eV.

Keywords

Band lineup Band offset and strain 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Partha Pratim Bera
    • 1
  • Siddhartha Panda
    • 1
  • Dipankar Biswas
    • 1
  1. 1.Institute of Radiophysics and ElectronicsUniversity of CalcuttaKolkataIndia

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