Catalytic Growth of 3C-SiC Nanorods: Structural and Optical Characterization

Part of the Environmental Science and Engineering book series (ESE)

Abstract

Cubic (3C)-silicon carbide (SiC) nanorods were grown in an inductively heated horizontal cold wall quartz tube reactor by atmospheric pressure chemical vapor deposition (APCVD). A single source precursor, hexamethyldisilane (HMDS) was used for both silicon and carbon and hydrogen (H2) as a carrier gas. A 10 nm thin film of nickel was used as a catalyst. As-grown nanorods were characterized by x-ray diffraction (XRD), Raman spectroscopy and field emission scanning electron microscopy (FESEM) to confirm the crystalline nature and the surface morphology of these nanorods. The room temperature photoluminescence (RTPL) spectrum showed the violet-blue emission from these nanorods.

Keywords

3C-SiC APCVD and single source precursor 

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© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Indian Institute of TechnologyKharagpurIndia

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