Abstract
Cantilevers made out of PECVD grown SiC films are reported here. The cantilevers were realized in two different methods—isotropic etch (Dry release) and combination of wet etch and critical point dry release. The dry release process for Silicon isotropic etch results in excellent etch selectivity against SiC, to provide released structures. The optimized wet release process is able to overcome stiction issues to provide excellent SiC cantilevers.
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References
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Acknowledgments
We acknowledge MCIT for funding support.The authors would like to thank Varadharaja Perumal, Sreekantha and Anita Shiva for their extensive help with SEM, Vibrometer and Lithography.
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© 2014 Springer International Publishing Switzerland
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Umamaheswara, A., Nair, S., Lavendra, Gupta, S., Vijayaraghavan, M.N., Bhat, N. (2014). PECVD Grown SiC Cantilevers with Dry and Wet Release. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_105
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DOI: https://doi.org/10.1007/978-3-319-03002-9_105
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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