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PECVD Grown SiC Cantilevers with Dry and Wet Release

  • Adithi Umamaheswara
  • Smitha Nair
  • Lavendra
  • Suman Gupta
  • M. N. Vijayaraghavan
  • Navakanta Bhat
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Cantilevers made out of PECVD grown SiC films are reported here. The cantilevers were realized in two different methods—isotropic etch (Dry release) and combination of wet etch and critical point dry release. The dry release process for Silicon isotropic etch results in excellent etch selectivity against SiC, to provide released structures. The optimized wet release process is able to overcome stiction issues to provide excellent SiC cantilevers.

Keywords

SiC PECVD Cantilevers 

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Notes

Acknowledgments

We acknowledge MCIT for funding support.The authors would like to thank Varadharaja Perumal, Sreekantha and Anita Shiva for their extensive help with SEM, Vibrometer and Lithography.

References

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    “Mechanical and structural properties of in situ doped PECVD silicon carbide layer for post-processing surface micromachining” Sensors and Actuators 82 2000. 210–218 Pham, H. T. M., De Boer, C. R., Kwakernaak, K., Sloof, W. G., & Sarro, P. M. (2001).Proc. of SPIE, 272-279Google Scholar
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    P.M. Sarro et al., Lowstress PECVD SiC thin films for IC-compatible microstructures. Sens. Actuators A 67, 175–180 (1998)CrossRefGoogle Scholar
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    N.O.V. Plank, M.A. Blauw, E.W.J.M. van der Drift, R. Cheung, Journal of Physics D: Applied Physics 36 (2003) 482CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Adithi Umamaheswara
    • 1
  • Smitha Nair
    • 1
  • Lavendra
    • 1
  • Suman Gupta
    • 1
  • M. N. Vijayaraghavan
    • 1
  • Navakanta Bhat
    • 1
    • 2
  1. 1.Centre for Nano Science and EngineeringIndian Institute of ScienceBangaloreIndia
  2. 2.Electrical Communication EngineeringIndian Institute of ScienceBangaloreIndia

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