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Modeling FinFETs for CMOS Applications

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Toward Quantum FinFET

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 17))

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Abstract

As FinFETs are being under intense research explorations today, the corresponding models are essential for understanding their electronic properties and also for future developments of the technology itself. A compact model for FinFETs with double-gate configuration is developed to assist FinFET-based integrated circuit design. The core model includes descriptions of both the current–voltage and terminal charge–voltage characteristics of FinFETs and is suitable for their circuit simulations. A physics-based hot carrier effect model for prediction of FinFETs performance degradation due to the interface state is reported further based on the core model. For future generations of FinFETs, the quantum confinement is becoming more important and is coupled with the widely used strain engineering. Tight binding modeling shows that the effects of a certain amount of uniaxial strain will be less effective for the on-current improvement.

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Author information

Authors and Affiliations

  1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

    Lining Zhang & Mansun Chan

  2. Graduate School of Advanced Sciences of Matter, Hiroshima University, Hiroshima, Japan

    Chenyue Ma

  3. School of Electronic and Computer Engineering, Peking University, Shenzhen, China

    Xinnan Lin

  4. Peking University SOC Key Laboratory, PKU-HKUST Shenzhen-HongKong Institute, Shenzhen, China

    Jin He

Authors
  1. Lining Zhang
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  2. Chenyue Ma
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  3. Xinnan Lin
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  4. Jin He
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  5. Mansun Chan
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Correspondence to Lining Zhang .

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Editors and Affiliations

  1. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Weihua Han

  2. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Zhiming M. Wang

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Zhang, L., Ma, C., Lin, X., He, J., Chan, M. (2013). Modeling FinFETs for CMOS Applications. In: Han, W., Wang, Z. (eds) Toward Quantum FinFET. Lecture Notes in Nanoscale Science and Technology, vol 17. Springer, Cham. https://doi.org/10.1007/978-3-319-02021-1_11

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