Abstract
In this chapter, results relative to an extensive comparison in a 65 nm CMOS technology of existing FFs classes and topologies are reported. In contrast to previous investigations, the analysis explicitly accounts for effects that arise in nanometer technologies and affect the energy-delay-area tradeoff such as leakage and layout and interconnect impact. The analysis involves a significantly wider range of FF classes and topologies. The tradeoffs between leakage, area, clock load, delay and other interesting properties are extensively discussed. The investigation permits to derive several considerations on each FF class and to identify the best topologies for a targeted application.
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Notes
- 1.
Sometimes, the nodes voltages can take long times to reach the 99 % of the steady value. Anyhow, when not employing simple pass-transistors that cause a threshold drop and when all transistors are properly sized according to the architectural T CK /FO4 specification [4], the 99 % value can be closely approached in practically acceptable times. Nevertheless, a good estimation of transient energy comes out also considering slightly smaller values than 99 % (e.g. 90 %), and hence it is simply a matter of convention when characterizing a FF.
- 2.
X opt is the optimum tapering factor leading to the minimum clocking energy in the clock domain.
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© 2015 Springer International Publishing Switzerland
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Alioto, M., Consoli, E., Palumbo, G. (2015). Analysis and Comparison in the Energy-Delay-Area Domain. In: Flip-Flop Design in Nanometer CMOS. Springer, Cham. https://doi.org/10.1007/978-3-319-01997-0_5
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DOI: https://doi.org/10.1007/978-3-319-01997-0_5
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Publisher Name: Springer, Cham
Print ISBN: 978-3-319-01996-3
Online ISBN: 978-3-319-01997-0
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