Abstract
The III–V multijunction solar cells consist of numerous layers with a transition between semiconductors of different composition—hetero-interfaces, which can impair the quality and performance of the cells. The properties of the hetero-interfaces and their impact to GaInP/GaAs/Ge solar cells performance are explored in this chapter. It was demonstrated that among all interface-related factors (like recombination at the interface states) the undesired potential barriers at the isotype hetero-interfaces have the most significant influence on cell performance at high sun concentration. In particular, a significant valence band offset at the hetero-interfaces between III-arsenides (GaAs, AlGaAs) and III-phosphides (GaInP, AlInP) leads to undesired potential barriers for majority carriers at the p–p isotype heterojunction interfaces that results in significant losses. A set of the experimental techniques was successfully applied for the interface characterization. The presence of the potential barrier and its effective height at the mentioned above interfaces were experimentally determined. Another phenomenon at the III-V/IV heterojunction interfaces is described on example of GaInP/Ge interface. An unexpected “parasitic” potential barrier was observed at this interface, which is related to inter-diffusion process.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
King, R.R., Law, D.C., Edmondson, K.M., et al.: 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells. Appl. Phys. Lett. 90, 183516 (2007)
Olson, J.M., Friedman, D.J., Kurtz, S.: High-Efficiency III-V Multijunction Solar Cells Handbook of Photovoltaic Science and Engineering. In: Luque, A., Hegedus, S. (eds.) John Wiley & Sons, Ltd, Chichester (2003)
Sharma, B.L., Purohit, R.K.: Semiconductor Heterojunctions. Pergamon, Elsevier Science & Technology (1974)
Andreev, V.M.: GaAs and high-efficiency space cells. In: Markvart, T., Castafier, L. (eds.) Practical Handbook of Photovoltaics: Fundamentals and Applications, pp. 433–2003. Elsevier Science, New York (417)
Adachi, S., GaAs, A.S.: AlAs, and AlxGa1 − xAsB: material parameters for use in research and device applications. J. Appl. Phys. 58, R1–R29 (1985)
Watanabe, M.O., Ohba, Y.: Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique. Appl. Phys. Lett. 50, 906–908 (1987)
Olson, J.M., Ahrenkiel, R.K., Dunlavy, D.J., et al.: Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Appl. Phys. Lett. 55, 1208 (1989)
Kurtz, S.R., Olson, J.M., Friedman, D.J., et al.: Passivation of interfaces in high-efficiency photovoltaic devices. In: Hasegawa, H., Hong, M., Lu, Z.H., Pearton S.J. (eds.) Proc. of the Compound Semiconductor Surface Passivation and Novel Device Processing Symposium. Mat. Res. Soc. Symp. Proc., vol. 573. pp. 95–106. Warrendale, USA (1999)
Wojtczuk, S.J., Vernon, S.M., Sanfacon M.M.: Comparison of windows for p–on–n InGaP solar cells. Proc. of the 23th IEEE Photovoltaic Specialists Conf. pp. 655–658 (1993)
Gudovskikh, A.S., Kaluzhniy, N.A., Lantratov, V.M., et al.: Numerical modelling of GaInP solar cells with AlInP and AlGaAs windows. Thin Solid Films 516, 6739–6743 (2008)
Lantratov, V.M., Kaluzhniy, N.A., Mintairov, S.A., Timoshina, N.K., Shvarts, M.Z., Andreev, V.M.: Semiconductors 41, 727 (2007)
Stangl, R., Kriegel, M., Schmidt, M.: AFORS-HET, Version 2.2, a numerical computer simulation program for simulation of heterojunction solar cells and measurements. Proc. of the IEEE 4th World Conf. on Photovolt. Energy Conv. vol 2, pp. 1350–1353. Hawaii, USA (2006)
Yang, M.J., Yamaguchi, M., Takamoto, T., et al.: Photoluminescence analysis of InGaP top cells for high-efficiency multi-junction solar cells. Sol. Energy Mater. Sol. Cells 45, 331–339 (1997)
Anderson, R.L.: Germanium-gallium arsenide heterojunction. IBM J. Res. Dev. 4(3), 283 (1960)
Gudovskikh, A.S., Kalyuzhnyy, N.A., Lantratov, V.M., Mintairov, S.A., Shvarts, M.Z., Andreev, V.M.: Properties of interfaces in GaInP solar cells. Semiconductors 43(10), 1363–1368 (2009)
Sze, S.M.: Physics of Semiconductor Devices, 2nd edn. John Wiley & Sons, New York (1981)
Vurgaftman, I., Meyer, J.R., Ram-Mohan, L.R.: Band parameters for III–V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2001)
Bour, D.P., Shealy, J.R., Wicks, G.W., Schaff, W.J.: Optical properties of AlxIn1 − xP grown by organometallic vapor phase epitaxy. Appl. Phys. Lett. 50, 615–617 (1987)
Jiang, C.-S., Friedman, D.J., Moutinho, H.R., Al-Jassim, M.M.: Profiling the built-in electrical potential in III–V multijunction solar cells. Proc. of the 4th World Conf. on Photovolt. Energy Conv. (WCPEC–4) pp. 853–856. Hawaii, USA (2006)
He, X., Razeghi, M.: J. Appl. Phys. 73, 3284 (1993)
Dehaese, O., Wallart, X., Schuler, O., Mollot, F.: X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs. J. Appl. Phys. 84, 2127–2132 (1998)
Liedenbaum, T.H.F., Valster, A., Severens, A.L.G.J., Hooft, G.W.: Determination of the GaInP/AlGaInP band offset C. Appl. Phys. Lett. 57, 2698–2700 (1990)
Dawson, M.D., Duggan, G.: Exciton localization effects and heterojunction band offset in (Ga, In)P–(Al, Ga, In)P multiple quantum wells. Phys. Rev. B 47, 12598–12604 (1993)
Dawson, M.D., Najda, S.P., Kean, A.H., et al.: Measurement of the direct energy gap of Al0.5In0.5P: implications for the band discontinuity at Ga1 – xInxP/AlyIn1 – yP. Phys. Rev. B 50, 11190–11191 (1994)
Ishitani, Y., Minagawa, S., Kita, T., et al.: The optical processes in AlInP/GaInP/AlInP quantum wells. J. Appl. Phys. 80, 4592–4598 (1996)
Vignaud, D., Mollot, F.: Conduction band offset in the AlxGayIn1 − x − yP/Ga0.52In0.48P system as studied by luminescence spectroscopy. J. Appl. Phys. 93, 384–389 (2003)
Patel, D., Hafich, M.J., Robinson, G.Y., Menoni, C.S.: Direct determination of the band discontinuities in InxGa1–xP/InyAl1–yP multiple quantum wells. Phys. Rev. B 48, 18031–18036 (1993)
Lang, D.V., Cohen, J.D., Harbison, J.P.: Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy. Phys. Rev. B 25, 5285–5320 (1982)
Gudovskikh, A.S., Kleider, J.P., Damon-Lacoste, J., et al.: Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy. Thin Solid Films 511–512, 385–389 (2006)
Gudovskikh, A.S., Kleider, J.P., Chouffot, R., et al.: III-phosphides heterojunction solar cell interface properties from admittance spectroscopy. J. Phys. D: Appl. Phys. 42, 165307 (2009)
Fahrner, W.R., Goesse, R., Scherff, M., et al.: Admittance measurements on a-Si/c-Si heterojunction solar cells. J. Electrochem. Soc. 152, G819–G823 (2005)
Kuo, H.C., Kuo, J.M., Wang, Y.C., et al.: Determination of the band offset of GalnP–GaAs and AllnP–GaAs quantum wells by optical spectroscopy. J. Electron. Mater. 26, 944–948 (1997)
Gudovskikh, A.S., Kleider, J.P., Kalyuzhnyy, N.A., et al.: Band structure at heterojunction interfaces of GaInP solar cells. Sol. Energy Mater. Sol. Cells 94, 1953–1958 (2010)
Gudovskikh, A.S., Zelentsov, K.S., Kalyuzhnyy, N.A., et al.: Interfaces in III-V multijunction solar cells: characterization and modelling. Eur. Mater. Res. Soc. Conf. E-MRS 2011. Nice, France (2011)
Friedman, D.J., Olson, J.M., Ward, S., et al.: Ge concentrator cells for III-V multijunction devices. Proc. of the 28th IEEE Photovolt. Spec. Conf. p. 965. Alaska, USA (2000)
Yamaguchi, M., Takamoto, M., Araki, K.: Super high-efficiency multi-junction and concentrator solar cells. Sol. Energy Mater. Sol. Cells 90, 3068–3077 (2006)
Van Ruyven, L.J.: Phenomena at heterojunctions. Annu. Rev. Mater. Sci. 2, 501–528 (1972)
Gudovskikh, A.S., Zelentsov, K.S., Kalyuzhnyy, N.A., et al.: Interface properties of GaInP/Ge heterostructure subcells of multijunction solar cells. J. Phys. D: Appl. Phys. 45, 495305 (2012)
Hannay, N.B.: Semiconductors. Reinhold Publishing Corporation, New York (1959)
Zakharov, N.D., Rozhanskij, V.N., Korchazhkina, R.L.: Defects evolving from the decomposition of a solid solution of phosphorus in germanium. Fiz. Tverd. Tela 16, 1444–1450 (1974) (in Russian)
Fistul, V.I., Yakovenko, A.G., Gvelesiani, A.A., Tsygankov, V.N., Korchazhkina, R.L.: Solubility and segregation of electrically active phosphorus in Ge. Izv. Akad. Nauk SSSR Neorg. Mater. 11, 539–541 (1975)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Gudovskikh, A.S., Kalyuzhnyy, N.A., Mintairov, S.A., Lantratov, V.M. (2014). Interfaces in III–V High Efficiency Solar Cells. In: Wang, X., Wang, Z. (eds) High-Efficiency Solar Cells. Springer Series in Materials Science, vol 190. Springer, Cham. https://doi.org/10.1007/978-3-319-01988-8_18
Download citation
DOI: https://doi.org/10.1007/978-3-319-01988-8_18
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-01987-1
Online ISBN: 978-3-319-01988-8
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)