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The DSL for Ultra-Thin Films of III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation

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Book cover Debye Screening Length

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 255))

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Abstract

In this chapter, we investigate the DSL in ultra-thin flims of III–V, ternary and quarternary semiconductors on the basis of newly formulated electron statistics in the presence of external light waves. It has been observed that the DSL decreases with increasing electron concentration, alloy composition, wavelength and intensity of light respectively in step like manner. All the results get transformed to the wellknown expression of the DSL for parabolic energy bands under certain limiting conditions in the absence of light waves. The Sect. 5.4 contains 12 open research problems.

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Reference

  1. P.K. Basu, Optical Processes in Semiconductors (Oxford University Press, Oxford, London, 2001)

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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2014). The DSL for Ultra-Thin Films of III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation. In: Debye Screening Length. Springer Tracts in Modern Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-319-01339-8_5

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