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Debye Screening Length pp 109–131Cite as

The DSL for III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation

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Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 255))

Abstract

The DSL in III–V, ternary and quarternary semiconductors on the basis of newly formulated electron statistics in the presence of intense external light waves has been investigated in this chapter. It has been observed that the DSL decreases with increasing electron concentration, alloy composition, wavelength and intensity of light in different manners which are totally band structure dependent. All the results get transformed to the wellknown expression of the DSL for parabolic energy bands under certain limiting conditions in the absence of light waves. The Sect. 4.4 contains 6 open research problems.

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References

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Jirania, Agartala, Tripura West, India

    Kamakhya Prasad Ghatak

  2. Department of Electrical Engineering, Shiv Nadar University, Noida, Uttar Pradesh, India

    Sitangshu Bhattacharya

Authors
  1. Kamakhya Prasad Ghatak
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  2. Sitangshu Bhattacharya
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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2014). The DSL for III–V, Ternary and Quaternary Semiconductors Under External Photo-Excitation. In: Debye Screening Length. Springer Tracts in Modern Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-319-01339-8_4

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