Abstract
Numerical device simulations show that slight extensions of the p-emitter thickness in 4H-SiC high voltage blocking bipolar pin diodes lead to a signi cant lowering of the forward voltage drop under high injection conditions at room temperature. The advantage of higher recombination currents in the enlarged p-region resulting from an enhanced excess carrier density overbalances the higher series resistance of the high-doped p-region. Both effects have their origin in the incomplete ionization of the acceptor dopants in the p-emitter. Hence, they become less signi cant at higher temperatures. A temperature dependent optimal p-emitter thickness is identi ed.
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References
W. Bartsch, H. Mitlehner, and S. Gediga, “Bipolar SiC-Diodes-Challenges arising from Physical and Technological Aspect”, Silicon Carbide and Related Materials 2006,2006.
D. Werber, G. Wachutka, “Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation”, Silicon Carbide and Related Materials 2006, pp. 905–908, 2006.
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© 2007 Springer-Verlag Wien
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Werber, D., Wachutka, G. (2007). Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_44
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DOI: https://doi.org/10.1007/978-3-211-72861-1_44
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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