Abstract
Technological and scientific activities in the synthesis of ferroelectric thin films have been in progress for approximately 35 years with some very notable achievements taking place along the way. The work started with the simple evaporation of BaTiO3 by Feldman (1955), and accelerated during the 1970’s with the advent of sputtering technologies. Since that time some totally new techniques and innovative processes have been introduced. The ability to routinely fabricate films having good ferroelectric properties in sub- micron thicknesses, and to demonstrate marketable products such as non-volatile memories and electro-optic switches has generated an immense interest in integrated ferroelectrics. Progress has been made in three areas: (1) theresearch and development of new processing technologies, (2) methods for accelerated testing and property measurement, and (3) the development of novel thin film devices utilizing the functional properties of ferroelectrics. Further advances in these areas are linked to an improved understanding of (1) the theory of nucleation and film growth related to composition, (2) the dependence of film properties on thickness, (3) concerns related to the compatibility of ferroelectrics with electrode materials, and (4) reliability issues.
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Sreenivas, K. (1993). Ferroelectric Thin Film Processing. In: Setter, N., Colla, E.L. (eds) Ferroelectric Ceramics. Monte Verità. Birkhäuser Basel. https://doi.org/10.1007/978-3-0348-7551-6_8
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DOI: https://doi.org/10.1007/978-3-0348-7551-6_8
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