Abstract
After an overview of time-dependent semiconductor device modeling, giving the development of the’ standard’ drift/diffusion model, we indicate why/when/how the model might be (radically) modified. The new proposed model has an algorithmic (computational) form but is not derived in the usual way as an approximation to a previously prescribed partial differential equation model — rather, it is introduced directly from ‘first principles’.
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Seidman, T.I. (1990). A New Algorithmic Model for the Transient Semiconductor Problem. In: Bank, R.E., Merten, K., Bulirsch, R. (eds) Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices. International Series of Numerical Mathematics / Internationale Schriftenreihe zur Numerischen Mathematik / Série internationale d’Analyse numérique, vol 93. Birkhäuser, Basel. https://doi.org/10.1007/978-3-0348-5698-0_11
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DOI: https://doi.org/10.1007/978-3-0348-5698-0_11
Publisher Name: Birkhäuser, Basel
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