Device Application of Reduced Graphene Oxide

Abstract

Chapter 5 presents an in-depth study on the utilization of reduced graphene oxide (RGO) as a gate metal in metal-oxide-semiconductor capacitor (MOSCAP) devices, highlighting its potential as an alternative to traditional metals. The chapter focuses on the synthesis of RGO through thermal annealing to enhance electrical conductivity and uniformity. The electrical properties of RGO, including its conductivity and work function, are measured by the four-point probe method and ultraviolet photoelectron spectroscopy (UPS). The calculated work function differences between the RGO and the semiconductor illustrates how RGO offers a better match compared to aluminum. The high performance of MOSCAP devices with RGO gate metals is demonstrated through capacitance-voltage (C-V) measurements, which are employed to assess the quality and reliability of the oxide layer in these devices. This chapter effectively shows the advancements in MOSCAP technology facilitated by the integration of RGO, marking a significant step forward in semiconductor device engineering.