Abstract
The circuit elements considered thus far were two-lead devices. When describing the behavior for those devices the relationship between just one current and one voltage was required. Here the discussion moves on to transistors that are three-lead, non-linear devices. Field effect transistors will be considered in this chapter and bipolar junction transistors will be treated in the next. These two different types of transistors serve as examples as to how more complicated devices can be treated using linearized models.
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Notes
- 1.
Named for the German engineer, Werner von Siemens (1816–1892). Note that his name includes the final “s” so that the unit should also include the final “s.” That is, the singular is “1 S” and not “1 siemen.” After all, 1 °C is not “one degree celciu.”
- 2.
The configuration shown is for demonstration purposes only. The configuration commonly used in large memory arrays differs from what is shown.
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Suits, B.H. (2023). FETs. In: Electronics for Physicists. Undergraduate Lecture Notes in Physics. Springer, Cham. https://doi.org/10.1007/978-3-031-36364-1_7
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DOI: https://doi.org/10.1007/978-3-031-36364-1_7
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