Abstract
The negative differential resistance (NDR) condition is shown by some materials under proper circumstances further more. In some device components, at a given interval of applied voltage, the slope of the I/V curve becomes negative. It is straightforward that the definition of negative resistance is only related to the differential resistance \(\frac{dV}{dI}\), the value of the resistance (\(\frac{V}{I}\)) being always positive.
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Further Reading
Textbooks
K. Brennan, A. Brown., Theory of modern electronic semicionductor devices J. Wiley (2002)
S. Sze, K.N. Kwok, Physics of Semiconductor Devices, 3rd edn. Wiley-Interscience (2006)
Journal Papers
P. Butcher, Theory of stable domain propagation in the Gunn effect. Phys. Lett. 19, 546 (1965)
L. Esaki, New Phenomenon in Narrow Germanium p- Junctions. Phys. Rev. 109, 603 (1958)
J. Gunn, Microwave oscillations of current in III-V semiconductors. Solid State Commun. 1, 88 (1963)
R. Hall, Tunnel diodes. IRE Trans. Electron. Devices ED-7, 1 (1960)
Kroemer, Theory of the Gunn effect. Proc. IEEE 52, 1736 (1964)
J. Ruch, G.S. Kino, Measurement of the velocity-field characteristic of Gallium Arsenide. Appl. Phys. Lett. 10, 40 (1967)
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Di Natale, C. (2023). Negative Differential Resistance Effects. In: Introduction to Electronic Devices. Springer, Cham. https://doi.org/10.1007/978-3-031-27196-0_5
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DOI: https://doi.org/10.1007/978-3-031-27196-0_5
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