Abstract
The technology of smelting one of the well-known modifications of multisilicon, namely, secondary cast polycrystalline silicon, is described, and options for its application for the production of a solar cell and the manufacture of heavily doped silicon substrates are described. The proposed multisilicon seems to be intentionally subjected to overdoping, which must be carried out by one or a group of impurities to the solubility limit and at the same time use a charge from a mixture of technical silicon of the highest grades. It is emphasized that the film growth as the base region of solar cells should be carried out under conditions of guaranteed suppression of autodoping by known methods. The requirements for the use of reverse technologies in the operations of obtaining raw Si during the buildup of the film base of solar cells are stated. The importance of using advanced techniques to control the process of the gas phase epitaxy of mathematical regression models has been studied.
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Notes
- 1.
According to the famous theoretical physicist, Professor A.S. Baltenkov [62], the regression coefficients in models 1 and 2 should be rounded off. In our opinion, this should not be done, since all calculations of the efficiency of a solar cell and the growth rate of its film are fundamental in the chloride process.
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Kadirov, A.L., Abdurakhmanov, B.M., Ashurov, H.B., Kharchenko, V. (2023). Technology of Secondary Cast Polycrystalline Silicon and Its Application in the Production of Solar Cells. In: Manshahia, M.S., Kharchenko, V., Weber, GW., Vasant, P. (eds) Advances in Artificial Intelligence for Renewable Energy Systems and Energy Autonomy. EAI/Springer Innovations in Communication and Computing. Springer, Cham. https://doi.org/10.1007/978-3-031-26496-2_8
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