Abstract
A review of the results of studies of terahertz radiation associated with impurity electron transitions in n-doped GaAs/AlGaAs quantum wells under conditions of interband optical excitation of nonequilibrium charge carriers is presented. The principles of radiation generation and methods of controlling its intensity are described: a decrease in the lifetime of electrons at impurity levels due to stimulated interband radiation and the introduction of a compensating acceptor impurity.
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Acknowledgements
Financial support from the Ministry of Science and Higher Education of the Russian Federation (state assignment) is gratefully acknowledged. IM also acknowledges a support from the Basic Research Program of the National Research University Higher School of Economics.
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Firsov, D., Makhov, I., Panevin, V., Sarkisyan, H.A., Vorobjev, L. (2022). Optically Pumped Terahertz Radiation Sources Based on Impurity Carrier Transitions in Quantum Wells. In: Blaschke, D., Firsov, D., Papoyan, A., Sarkisyan, H.A. (eds) Optics and Its Applications. Springer Proceedings in Physics, vol 281. Springer, Cham. https://doi.org/10.1007/978-3-031-11287-4_2
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