Abstract
The need to increase the level of digital security standards requires a sustained research effort on new means of perturbations likely to disturb the processing of integrated circuits. X-rays modification is a powerful semi-permanent fault injection technique with a high spatial accuracy, which allows an adversary to modify efficiently secret data from an electronic device. Experimental results demonstrate that several semi-permanent bit erase faults can be injected in code and data with corrupting flash memory, even with an X-rays spot from an X-rays laboratory source of less than 10 µm in diameter. This is the order of magnitude of 15 memory cells with a process node of 350 nm in the presented experiments. The article also presents the specificity of performing an X-rays attack without the need of a synchrotron-focused beam, as presented in CHES 2017 [1].
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This work was carried out in the framework of the MITIX project funded by ANR Project.
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Maingault, L. et al. (2022). Laboratory X-rays Operando Single Bit Attacks on Flash Memory Cells. In: Grosso, V., Pöppelmann, T. (eds) Smart Card Research and Advanced Applications. CARDIS 2021. Lecture Notes in Computer Science(), vol 13173. Springer, Cham. https://doi.org/10.1007/978-3-030-97348-3_8
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