Abstract
This chapter uses insight to explain how junction and metal–oxide–semiconductor (MOS) field-effect transistors (FETs) block and conduct current. It describes how MOSFETs accumulate, deplete, and invert their channels and how they saturate their currents in cutoff, sub-threshold, and inversion. It also discusses body effect, weak inversion, how gate–channel oxide capacitance distributes across operating regions, and short-channel effects, like drain-induced barrier lowering (DIBL), surface scattering, hot-electron injection, oxide-surface ejections, velocity saturation, and impact ionization and avalanche. Discussions extend to varactors, MOS diodes, lightly doped drains (LDDs), diffused-channel MOSFETs (DMOS), junction isolation, substrate MOSFETs, welled MOSFETs, and electronic and systemic noise coupling and injection. Illustrative figures, equations, examples, and SPICE simulations complement discussions throughout.
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Abbreviations
- BJT :
-
Bipolar-junction transistor
- CMOS :
-
Complementary MOS
- DIBL :
-
Drain-induced barrier lowering
- DMOS :
-
Diffused-channel or double-diffused MOS
- EHP :
-
Electron–hole pair
- FET :
-
Field-effect transistor
- JFET :
-
Junction FET
- LDMOS :
-
Lateral DMOS
- LDD :
-
Lightly doped drain
- MOS :
-
Metal–oxide–semiconductor
- NBTI :
-
Negative bias temperature instability
- RSS :
-
Root sum of squares
- SNR :
-
Signal-to-noise ratio
- SiO2 :
-
Silicon dioxide
- VCO :
-
Voltage-controlled oscillator
- VDMOS :
-
Vertical DMOS
- AJ :
-
Junction area
- β0 :
-
Base–collector current gain
- CCH :
-
Channel capacitance
- CDB :
-
Drain–body capacitance
- CDEP :
-
Depletion capacitance
- CGB :
-
Gate–body capacitance
- CGD :
-
Gate–drain capacitance
- CGS :
-
Gate–source capacitance
- CJ :
-
Junction capacitance
- CJ0 :
-
Zero-bias junction capacitance
- COL :
-
Overlap capacitance
- COX :
-
Oxide capacitance
- CSB :
-
Source–body capacitance
- dW :
-
Depletion width
- EBG :
-
Band-gap energy
- ECN/P :
-
Critical electric field
- EF :
-
Fermi energy level
- EK :
-
Kinetic energy
- ε0 :
-
Permittivity in vacuum
- εOX :
-
Relative permittivity of SiO2
- fC :
-
Noise-corner frequency
- fO :
-
Operating frequency
- fSW :
-
Switching frequency
- ΔfBW :
-
Frequency bandwidth
- gm :
-
Small-signal transconductance
- γN/P :
-
Body-effect parameter
- iB :
-
Body current
- iD :
-
Drain current
- iDIF :
-
Diffusion current
- iFLD :
-
Drift current
- iG :
-
Gate current
- iIN :
-
Input current
- inc :
-
Coupled noise current
- inf :
-
Flicker noise current
- ins :
-
Shot noise current
- int :
-
Thermal noise current
- iS :
-
Source current
- iSUB :
-
Substrate current
- ISN/P :
-
Saturation current
- KB :
-
Boltzmann’s constant
- KF :
-
Flicker noise coefficient
- KN/P :
-
Baseline conductivity
- KN/P′ :
-
Transconductance parameter
- LCH :
-
Channel length
- LMIN :
-
Minimum oxide length
- LOL :
-
Overlap length
- LOX or L :
-
Oxide length
- λN/P :
-
Channel-length modulation parameter
- μN :
-
Electron mobility
- μP :
-
Hole mobility
- nd :
-
Spectral noise density
- nI :
-
Ideality factor
- qE :
-
Electronic charge
- RCH :
-
Channel resistance
- RON :
-
On resistance
- RDS :
-
Drain–source resistance
- RSH :
-
Sheet resistivity
- tOX :
-
Oxide thickness
- TJ :
-
Junction temperature
- vB :
-
Body terminal/voltage
- vBS :
-
Body–source voltage
- vD :
-
Drain terminal/voltage
- vDD :
-
Positive power supply
- vDS :
-
Drain–source voltage
- vDS(SAT) :
-
Drain–source pinch-off saturation voltage
- vDS(SAT)′ :
-
Drain–source sub-threshold saturation voltage
- vDS(SAT)″ :
-
Drain–source velocity-saturation voltage
- vE :
-
Electron velocity
- vG :
-
Gate terminal/voltage
- vGS :
-
Gate–source voltage
- vGSP, vGST, and vSGT :
-
Gate drive
- vH :
-
Hole velocity
- vJR :
-
Reverse junction voltage
- vnt :
-
Thermal noise voltage
- vS :
-
Source terminal/voltage
- vTN/P :
-
Threshold voltage
- VA :
-
Early voltage
- VBI :
-
Built-in (potential) voltage
- VP :
-
Pinch-off voltage
- Vt :
-
Thermal voltage
- VTN/P0 :
-
Zero-bias vTN/P
- ψB :
-
Surface–body barrier potential
- ψS :
-
Surface potential
- wB :
-
Effective base width
- WCH or W :
-
Channel width
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Rincón-Mora, G.A. (2023). Field-Effect Transistors. In: Switched Inductor Power IC Design. Springer, Cham. https://doi.org/10.1007/978-3-030-95899-2_2
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DOI: https://doi.org/10.1007/978-3-030-95899-2_2
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