Abstract
A fundamental issue to transport studies of topological insulator crystals has been the unavoidable albeit limitable parallel thermally activated bulk conduction. These crystals require careful crystal growth under laboratory conditions to unleash their topological properties, unlike rhombohedral graphite films which are exfoliated from high quality crystals of naturally occurring graphite.The bulk band gap of rhombohedral graphite films, in the thicknesses of the films studied (9 to 50 layers) with tight binding predicted bulk gap sizes ranging from 370 to 71 meV is comparable to bulk gap sizes of ordinary topological insulators. During experiments, one would expect a smaller transport gap size to manifest itself as it has been the case in other topological insulators, where one would expect, the conduction at low temperature at least, to be dominated by the surface states of topological origins.
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References
Heikkilä TT, Volovik GE (2011) Dimensional crossover in topological matter: evolution of the multiple Dirac point in the layered system to the flat band on the surface. JETP Lett 93(2):59–65. https://doi.org/10.1134/S002136401102007X
Fu L, Kane CL, Mele EJ (2007) Topological insulators in three dimensions. Phys Rev Lett 98(10):1–4. https://doi.org/10.1103/PhysRevLett.98.106803
Xiao R, Tasnádi F, Koepernik K, Venderbos JWF, Richter M, Taut M (2011) Density functional investigation of rhombohedral stacks of graphene: Topological surface states, nonlinear dielectric response, and bulk limit. Phys. Rev. B-Condens. Matter Mater. Phys. 84(16):1–15. https://doi.org/10.1103/PhysRevB.84.165404
Asbóth JK, Oroszlány L, Pályi A (2016) The Su-Schrieffer-Heeger (SSH) model. In: A short course on topological insulators: band structure and edge states in one and two dimensions. Springer International Publishing, Cham, pp 1–22
Slizovskiy S, McCann E, Koshino M, Fal’ko VI (2019) Films of rhombohedral graphite as two-dimensional topological semimetals. Commun. Phys. 2(1):1–10. https://doi.org/10.1038/s42005-019-0268-8
Ho CH, Chang CP, Lin MF (2016) Evolution and dimensional crossover from the bulk subbands in ABC-stacked graphene to a three-dimensional Dirac cone structure in rhombohedral graphite. Phys Rev B 93(7). https://doi.org/10.1103/PhysRevB.93.075437
Ren Z, Taskin AA, Sasaki S, Segawa K, Ando Y (2010) Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2 Te2 Se. Phys Rev B-Condens Matter Mater Phys 82(24):1–4. https://doi.org/10.1103/PhysRevB.82.241306
Skinner B, Chen T, Shklovskii BI (2012) Why is the bulk resistivity of topological insulators so small? Phys Rev Lett 109(17):1–5. https://doi.org/10.1103/PhysRevLett.109.176801
Barreto L et al (2014) Surface-dominated transport on a bulk topological insulator. Nano Lett 14(7):3755–3760. https://doi.org/10.1021/nl501489m
Henni Y et al (2016) Rhombohedral multilayer graphene: a magneto-Raman scattering study. Nano Lett 16(6):3710–3716. https://doi.org/10.1021/acs.nanolett.6b01041
Yang Y et al (2019) Stacking order in graphite films controlled by van der Waals technology. Nano Lett 19(12):8526–8532. https://doi.org/10.1021/acs.nanolett.9b03014
Shi Y et al (2020) Electronic phase separation in multilayer rhombohedral graphite. Nature 584(7820):210–214. https://doi.org/10.1038/s41586-020-2568-2
Kushwaha SK et al (2016) Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties. Nat Commun 7(1):11456. https://doi.org/10.1038/ncomms11456
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Ozdemir, S. (2021). Bulk Versus Surface Conduction in Rhombohedral Graphite Films. In: Electronic Properties of Rhombohedral Graphite. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-030-88307-2_4
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DOI: https://doi.org/10.1007/978-3-030-88307-2_4
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