Abstract
In the last two decades, MEMS products have deeply permeated our ordinary lives, investing a multitude of markets.
Contemporary world is the answer to Richard Feynman’s question “Which are the possibilities of small but moveable machines?” It was 1959 when he asked this question during one of his famous conferences held at Los Angeles High School, trying to imagine the realization of infinitesimal machines (Feynman R, Plenty of room at the bottom. Talk given to American Physical Society in Pasadena, CA. https://web.pa.msu.edu/people/yang/RFeynman_plentySpace.pdf, 1959). The revolution he imagined has later been driven by MEMS device realization enabled by a new technology: the MEMS micromachining technology.
In MEMS sensors or actuators devices, 3D structures are realized through silicon that can be movable or fixed, as described in Part III and Part IV of the present book. The main geometrical features make the world of MEMS a new one: depths ranging from 1 μm to full wafer thickness (725 μm), in-plane sizes spanning from nanometers to centimeters, ratios between etch depth and feature width reaching up to 70:1 – that is what high Aspect Ratio (AR) means. The silicon patterning must be anisotropic to guarantee a tight CD control, perpendicular to the silicon surface to allow the best device functionality and free from morphological defectiveness. The “carving” approach which fulfills all these requirements is called Dry Deep Silicon Etch.
Two main techniques have been developed to “carve” silicon: Cryogenic (Tachi S, Tsujimoto K, Okudaira S, Appl Phys Lett 52:616–618, 1988 February) and Bosch (Laermer F, Schilp A, Method of anisotropically etching silicon. German Patent No DE4241045, 1993 (US Patent No 5501893, Mar. 26, 1996)), the second one proving to be more versatile and reliable and therefore adopted by ST MEMS R&D Group in Italy since the very beginning of the first ST MEMS platform development.
ST’s deep silicon etch story begins in 1999 with the installation of one of the most innovative 6″ plasma tools developed by STS (Surface Technology System) in partnership with Bosch. Since then, MEMS market has widened its product portfolio and more suppliers appeared on the stage. A lot of development has been done in terms of equipment to follow the continuous demand for plasmas with higher precision and resolution to enhance sensors and actuators performances.
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References
Tachi, S., Tsujimoto, K., & Okudaira, S. (1988, February). Low-temperature reactive ion etching and microwave plasma etching of silicon. Applied Physics Letters, 52(8), 616–618.
Laermer, F., & Schilp, A. (1993). Method of anisotropically etching silicon. German Patent No DE4241045 (US Patent No 5501893, Mar. 26, 1996).
Blauw, M. A., et al. (2002). Advanced time-multiplexed plasma etching of high aspect ratio silicon structures. Journal of Vacuum Science and Technology B, 20, 3106–3110.
Rangelow, I. W. (2003). Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems. Journal of Vacuum Science and Technology A, 21, 1550–1562.
Chung, C. K., & Chiang, H. N. (2004). Inverse RIE lag of silicon deep etching. NSTI-Nanotech 2004, www.nsti.org, ISBN 0-9728422-7-6, Vol. 1.
Ayón, A. A., Braff, R., Lin, C. C., Sawin, H. H., & Schmidt, M. A. (1999). Characterization of a time multiplexed inductively coupled plasma etcher. Journal of the Electrochemical Society, 146(1), 339–349.
Zlatanov, N. Advanced plasma processing for semiconductor manufacturing. Semicon West 2000, San Francisco.
Munro, S. (2009). Notch free SOI etching on the STS ICP-RIE. NanoFab, University of Alberta. https://www.nanofab.ualberta.ca/wp-content/uploads/2009/07/Notch-Reduction-on-the-STS-ICP-RIE.pdf
Owen, K. J., Van Der Elzen, B., Peterson, R. L.., & Najafi, K. High aspect ratio deep silicon etching. MEMS conference 2012.
Tang, Y., Sandoughsaz, A., Owen, K. J., & Najafi, K. (2018). Ultra deep reactive ion etching of high aspect-ratio and thick silicon using a ramped-parameter process. Journal of Microelectromechanical Systems, 27(4), 686–697.
Laermer, F., Schilp, A., Funk, K., & Offenberg, M. Bosch deep silicon etching: Improving uniformity and etch rate for advanced MEMS applications. MEMS conference 1999.
Kaajakari, V. Micromechanical resonator. US Patent No US 2009/0189481 A1, Jan. 23, 2009.
Gattere, G., Rizzini, F., Corso, L., Alessandri, A., Tripodi, F., & Gelmi, I. (2018). Experimental investigation of MEMS DRIE etching dimensional loss. The 5th IEEE international symposium on inertial sensors and systems.
Kempe, V. (2010). Inertial MEMS – Principles and practice. Cambridge University Press.
Gattere, G., Rizzini, F., Corso, L., Alessandri, A., Tripodi, F., & Paleari, S. (2019). Geometrical and process effects on MEMS dimensional loss: A frequency based characterization. The 6th IEEE international symposium on inertial sensors and systems.
Jansen, H., de Boer, M., Wiegerink, R., Tas, N., Smulders, E., Neagu, C., & Elwenspoek, M. (1997). Rie lag in high aspect ratio trench etching of silicon. Microelectronic Engineering, 35, 45–50.
Roland, J. P. (1985). Endpoint detection in plasma etching. Journal of Vacuum Science & Technology A, 3, 631.
Weinberg, M. S., & Kourepenis, A. (2006, June). Error sources in in-plane silicon tuning-fork MEMS gyroscopes. Journal of Microelectromechanical Systems, 15(3).
Merz, P., Pilz, W., Senger, F., Reimer, K., Grouchko, M., Pandhumsoporn, T., Bosch, W., Cofer, A., & Lassig, S.. Impact of Si DRIE on vibratory MEMS gyroscope performance. Transducers and Eurosensors conference 2007.
Hwang, G. S., & Giapis, K. P. (1997). On the origin of the notching effect during etching in uniform high density plasmas. Journal of Vacuum Science & Technology B, 15, 70–87.
Laermer, et al. Plasma etching method having pulsed substrate electrode power. US Patent No US 6,926,844 B1, Aug. 9, 2005.
Mayurika, J. (2018). Study on MEMS (Micro Electro Mechanical Systems).
Widder, J. et al. (2014). Basic principles of Mems microphones (EDN).
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Alessandri, A., D’Ercoli, F., Petruzza, P., Sciutti, A. (2022). Deep Silicon Etch. In: Vigna, B., Ferrari, P., Villa, F.F., Lasalandra, E., Zerbini, S. (eds) Silicon Sensors and Actuators. Springer, Cham. https://doi.org/10.1007/978-3-030-80135-9_5
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