Abstract
Chemical vapor deposition (CVD) techniques play a key role in the fabrication process of any semiconductor device. In this chapter, we review two branches such as Low Pressure CVD (LPCVD) and Plasma Enhanced CVD (PECVD) with a special focus on the materials of interest for MEMS devices. LPCVD is the reference technique for the deposition of polysilicon membranes and thick low stress silicon nitride that are essentials for the fabrication of MEMS microphones. On the other hand, PECVD is the technique of choice for the deposition of all the dielectrics used for electrical and structural applications or for the passivation of the devices. The capability of tuning of film stress provides the unique opportunity to fabricate peculiar films such as neutral stress TEOS or very compressive silicon nitride to be employed for the fabrication of MEMS actuators.
Some selected cases of study are presented for both LPCVD and PECVD with the aim to underline how conventional deposition approaches can be exploited to obtain materials with tailored properties as requested by their use in advanced MEMS sensors and actuators.
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Campedelli, R., Lamagna, L., Nicoli, S., Nomellini, A. (2022). Thin Film Deposition. In: Vigna, B., Ferrari, P., Villa, F.F., Lasalandra, E., Zerbini, S. (eds) Silicon Sensors and Actuators. Springer, Cham. https://doi.org/10.1007/978-3-030-80135-9_3
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DOI: https://doi.org/10.1007/978-3-030-80135-9_3
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