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Non-Ideal Effects in GaN Capacitances and Their Modeling

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Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

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Abstract

Capacitance models are critical for frequency and transient behavior of the device. In GaN HEMTs, capacitance shows unique behavior with input bias changes due to the complex structure and physics of the device. This chapter discusses the modeling of device capacitances in ASM-HEMT model.

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Authors and Affiliations

  1. School of Engineering, Macquarie University, Sydney, NSW, Australia

    Sourabh Khandelwal

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  1. Sourabh Khandelwal
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Khandelwal, S. (2022). Non-Ideal Effects in GaN Capacitances and Their Modeling. In: Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer, Cham. https://doi.org/10.1007/978-3-030-77730-2_7

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  • DOI: https://doi.org/10.1007/978-3-030-77730-2_7

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-030-77729-6

  • Online ISBN: 978-3-030-77730-2

  • eBook Packages: EngineeringEngineering (R0)

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