Abstract
GaN HEMTs suffer from charge-trapping effects. The charge-trapping affects behavior of both RF and power GaN devices. These are complex phenomenon, and the modeling of these effects is further complicated by the needs and approximations made to develop such models. Models for trapping effects in GaN HEMTs in ASM-HEMT model are discussed here.
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Notes
- 1.
An acceptor trap center is a trap center which is neutral when all the energy levels of the trap center are empty, and negatively charged and, therefore, ionized, when one or more energy levels of the trap center are occupied by electrons.
- 2.
A donor trap center is a trap center that is neutral when all the energy levels of the trap center are occupied by electrons, and positively charged and, therefore, ionized, when one or more energy levels of the trap center are empty.
- 3.
Consider, for instance, a sheet of trap centers. Let
be the cross-sectional area perpendicular to the direction of the “injected” current. The currents I
n and I
p are related to n
J and p
J by 
and 
, where 
and 
are the drift velocities of the injected electrons and holes, respectively.
be the cross-sectional area perpendicular to the direction of the “injected” current. The currents I
n and I
p are related to n
J and p
J by 
and 
, where 
and 
are the drift velocities of the injected electrons and holes, respectively.References
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Khandelwal, S. (2022). Trapping Models. In: Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer, Cham. https://doi.org/10.1007/978-3-030-77730-2_6
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DOI: https://doi.org/10.1007/978-3-030-77730-2_6
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