Abstract
Real GaN devices have a plethora of physical effects present during their operation. These physical phenomena need to be modeled for development of an accurate compact model. This chapter will discuss modeling of these effects in ASM-HEMT model.
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Khandelwal, S. (2022). Non-ideal Effects in Device Current and Their Modeling. In: Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer, Cham. https://doi.org/10.1007/978-3-030-77730-2_5
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DOI: https://doi.org/10.1007/978-3-030-77730-2_5
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Publisher Name: Springer, Cham
Print ISBN: 978-3-030-77729-6
Online ISBN: 978-3-030-77730-2
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