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Core Formulations in ASM-HEMT Model

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Advanced SPICE Model for GaN HEMTs (ASM-HEMT)
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Abstract

This chapter discusses the core model formulations in the ASM-HEMT compact model. These formulations lie at the heart of the ASM-HEMT model. These physics-based formulations are developed by developing analytical and self-consistent solution of Schrodinger and Poisson equation in the quantum well of the GaN HEMT. We will discuss the derivation of these formulations in this chapter.

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References

  1. Palacios, T., Dora, Y., Chakraborty, A., Sanabria, C., Keller, S., DenBaars, S., Mishra, U.: Optimization of AlGaN/GaN HEMTs for High Frequency Operation (2006)

    Google Scholar 

  2. Melczarsky, I., Lonac, J.A., Filicori, F., Santarelli, A.: IEEE Trans. Microwave Theory Tech. 56(9), 2017 (2008). https://doi.org/10.1109/TMTT.2008.2001956

  3. Ibbetson, J.P., Fini, P., Ness, K., DenBaars, S., Speck, J., Mishra, U.: Appl. Phys. Lett. 77(2), 250 (2000)

    Google Scholar 

  4. Kola, S., Golio, J.M., Maracas, G.N.: IEEE Electron Device Lett. 9(3), 136 (1988)

    Google Scholar 

  5. Khandelwal, S., Ghosh, S., Chauhan, Y., Iniguez, B., Fjeldly, T.: In: Proceedings of the 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp. 1–4. IEEE, New York (2015)

    Google Scholar 

  6. Khandelwal, S., Chauhan, Y.S., Fjeldly, T.A.: IEEE Trans. Electron Devices 59(10), 2856 (2012). https://doi.org/10.1109/TED.2012.2209654

  7. Ward, D.E.: (1982)

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Khandelwal, S. (2022). Core Formulations in ASM-HEMT Model. In: Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer, Cham. https://doi.org/10.1007/978-3-030-77730-2_4

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  • DOI: https://doi.org/10.1007/978-3-030-77730-2_4

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-030-77729-6

  • Online ISBN: 978-3-030-77730-2

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