Abstract
Model formulations for the flicker and thermal noise in GaN HEMT are discussed in this chapter.
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References
Palacios, T., Dora, Y., Chakraborty, A., Sanabria, C., Keller, S., DenBaars, S., Mishra, U.: Optimization of AlGaN/GaN HEMTs for High Frequency Operation (2006)
Halford, D.: Proc. IEEE 56(3), 251 (1968)
Hung, K.K., Ko, P.K., Hu, C., Cheng, Y.C.: IEEE Trans. Electron Devices 37(5), 1323 (1990)
Dasgupta, A., Khandelwal, S., Chauhan, Y.S.: IEEE J. Electron Devices Soc. 2(6), 174 (2014). https://doi.org/10.1109/JEDS.2014.2347991
Dasgupta, A., Khandelwal, S., Chauhan, Y.S.: IEEE Microwave Wireless Compon. Lett. 25(6), 376 (2015). https://doi.org/10.1109/LMWC.2015.2422472
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Khandelwal, S. (2022). Noise Models. In: Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer, Cham. https://doi.org/10.1007/978-3-030-77730-2_10
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DOI: https://doi.org/10.1007/978-3-030-77730-2_10
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