Abstract
This chapter introduces the Gallium Nitride semiconductor devices to the readers. Starting from the end application point of view, this chapter first discusses the key figures of merit for a semiconductor devices to be “ideal” for radio-frequency and power switching applications. Next, discussions on how these application oriented key figures of merits relate to the fundamental material properties are presented. A comparison among these material properties for a few key semiconductor technologies is drawn highlighting how GaN-based devices emerge as excellent candidates for RF and power circuit applications.
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References
Nakamura, S.: Jpn. J. Appl. Phys. 30(10A), L1705 (1991)
Nakamura, S., Senoh, M., Mukai, T.: Jpn. J. Appl. Phys. 32(1A), L8 (1993)
Nakamura, S., Mukai, T., Senoh, M.: Jpn. J. Appl. Phys. 30(12A), L1998 (1991)
Khan, M.A., Hu, X., Sumin, G., Lunev, A., Yang, J., Gaska, R., Shur, M.: IEEE Electron Device Lett. 21(2), 63 (2000)
Khan, M.A., Van Hove, J., Kuznia, J., Olson, D.: Appl. Phys. Lett. 58(21), 2408 (1991)
Amano, H., Sawaki, N., Akasaki, I., Toyoda, Y.: Appl. Phys. Lett. 48(5), 353 (1986)
Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., Oki, K.: J. Cryst. Growth 115(1–4), 628 (1991)
Lanford, W., Tanaka, T., Otoki, Y., Adesida, I.: Electron. Lett. 41(7), 449 (2005)
Binari, S., Kruppa, W., Dietrich, H., Kelner, G., Wickenden, A., Freitas Jr, J.: Solid-State Electron. 41(10), 1549 (1997)
Zhang, N.Q., Keller, S., Parish, G., Heikman, S., DenBaars, S., Mishra, U.: IEEE Electron Device Lett. 21(9), 421 (2000)
Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I.: IEEE Trans. Electron Devices 53(2), 356 (2006)
Palacios, T., Dora, Y., Chakraborty, A., Sanabria, C., Keller, S., DenBaars, S., Mishra, U.: Optimization of AlGaN/GaN HEMTs for High Frequency Operation (2006)
Micovic, M., Brown, D., Regan, D., Wong, J., Tang, Y., Herrault, F., Santos, D., Burnham, S., Tai, J., Prophet, E. et al.: In: Proceedings of the 2016 IEEE International Electron Devices Meeting (IEDM), pp. 3–3. IEEE, New York (2016)
Wu, Y.F., Saxler, A., Moore, M., Smith, R., Sheppard, S., Chavarkar, P., Wisleder, T., Mishra, U., Parikh, P.: IEEE Electron Device Lett. 25(3), 117 (2004)
Wu, Y.F., Moore, M., Wisleder, T., Chavarkar, P., Mishra, U., Parikh, P.: In: IEDM Technical Digest: IEEE International Electron Devices Meeting, 2004, pp. 1078–1079. IEEE, New York (2004)
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Khandelwal, S. (2022). Gallium Nitride Semiconductor Devices. In: Advanced SPICE Model for GaN HEMTs (ASM-HEMT). Springer, Cham. https://doi.org/10.1007/978-3-030-77730-2_1
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DOI: https://doi.org/10.1007/978-3-030-77730-2_1
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