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Design of a CMOS Bandgap Reference Voltage Using the OP AMP in 180 nm Process

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Digital Technologies and Applications (ICDTA 2021)

Abstract

This article proposes the implementation and design of a first-order CMOS Bandgap reference using an operational amplifier with negative feedback to improve the power supply rejection ratio (PSRR) and reduce the temperature coefficient (TC). The circuit is designed in 180 nm CMOS process technology and provides a reference output voltage of 1.2 V over an extended temperature range from −40 °C to 120 °C with a measured temperature coefficient of 54 ppm/°C. The BGR chip uses a 1.8 V supply.

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Correspondence to Ahmed Rahali .

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© 2021 The Author(s), under exclusive license to Springer Nature Switzerland AG

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Rahali, A., El Khadiri, K., Lakhliai, Z., Qjidaa, H., Tahiri, A. (2021). Design of a CMOS Bandgap Reference Voltage Using the OP AMP in 180 nm Process. In: Motahhir, S., Bossoufi, B. (eds) Digital Technologies and Applications. ICDTA 2021. Lecture Notes in Networks and Systems, vol 211. Springer, Cham. https://doi.org/10.1007/978-3-030-73882-2_150

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