Abstract
Recently, dislocation in single-crystal silicon has been confirmed to be induced by fatigue. It was found that the fatigue lifetime of silicon is likely to be dominated by accumulation of crystal defects, i.e., dislocations. In previous studies, crystal defects occurring due to cyclic compressive stress were observed. However, there is rare evidence of those defects inducing fatigue damage under cyclic stress. This paper presents a result of strength comparison of silicon structures with and without cyclic compressive stress applying before static strength tests. The reduce of static strength induced by compressive fatigue shows another evidence supporting damage growth inside silicon MEMS structures.
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References
Muhlstein, C.L., Brown, S.B., Ritchie, R.O.: High-cycle fatigue of single-crystal silicon thin films. J. Micrelectromech. Syst. 10, 593–600 (2001)
Muhlstein, C.L., Stach, E.A., Ritchie, R.O.: A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading. Acta Mater. 50, 3579–3595 (2002)
Kahn, H., Avishai, A., Ballarini, R., Heuer, A.H.: Surface oxide effects on failure of polysilicon MEMS after cyclic and monotonic loading. Scripta Mater. 59, 912–915 (2008)
Kato, N.I., Nishikawa, A., Saka, H.: Dislocations in Si generated by fatigue at room temperature. Mater. Sci. Semicond. Process. 4, 113–115 (2001)
Nakao S., Ando T., Arai S., Saito N., Sato K.: Variation in dislocation pattern observed in scs films fractured by tensile test: effects of film thickness and testing temperature. In: Proceedings of the MRS 2008, 1052, DD03-21 (2008)
Parish, C., Batchelor, D., Progl, C., Russell, P.: Tutorial: electron beam-induced current in the scanning electron microscope. Microsc. Anal. 21, 11–13 (2007)
Huy, V.L., Kamiya, S.: A direct evidence of fatigue damage growth inside silicon MEMS structures obtained with EBIC technique. Vietnam J. Mech. 36(2), 109–118 (2014)
Kamiya, S., Kongo, A., Sugiyama, H., Izumi, H.: Electronic imaging of subcritical defect accumulation in single crystal silicon under fatigue loading. Sens. Actuat. A 279, 705–711 (2018)
Huy, V.L., Gaspar, J., Paul, O., Kamiya, S.: Estimation of the parameters determining strength and fatigue behaviors of arbitrarily-shaped polysilicon thin films. In: International Electronic Packaging Technical Conference and Exhibition, vol. 44618, pp. 409–415 (2012)
Huy, V.L., Kamiya, S., Gaspar, J., Paul, O.: Fatigue lifetime prediction of arbitrarily-shaped MEMS structures. Microsyst. Technol. 25(7), 2713–2726 (2019)
Weibull, W.: A statistical distribution function of wide applicability. J. Appl. Mech. 18, 293–297 (1951)
Cousineau, D., Brown, S., Heathcote, A.: Fitting distributions using maximum likelihood: methods and Packages. Behav. Res. Methods Instrum. Comput. 36, 277–290 (2004)
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Le Huy, V., Kamiya, S. (2021). One More Evidence Supporting Damage Growth Inside Silicon MEMS Structures from Comparison of Strength Affected by Cyclic Compressive Stress. In: Long, B.T., Kim, YH., Ishizaki, K., Toan, N.D., Parinov, I.A., Vu, N.P. (eds) Proceedings of the 2nd Annual International Conference on Material, Machines and Methods for Sustainable Development (MMMS2020). MMMS 2020. Lecture Notes in Mechanical Engineering. Springer, Cham. https://doi.org/10.1007/978-3-030-69610-8_110
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DOI: https://doi.org/10.1007/978-3-030-69610-8_110
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